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RF4E075AT pch -30v -7.5a middle power mosfet datasheet ll outline v dss -30v huml2020l8 r ds(on) (max.) 21.7m i d 7.5a p d 2w ll inner circuit ll features 1) low on - resistance. 2) high power small mold package (huml2020l8). 3) pb-free lead plating ; rohs compliant. 4) halogen free. ll packaging specifications type packing embossed tape reel size (mm) 180 ll application tape width (mm) 8 switching basic ordering unit (pcs) 3000 load switch taping code tcr marking jt ll absolute maximum ratings (t a = 25c) parameter symbol value unit drain - source voltage v dss -30 v continuous drain current i d 7.5 a pulsed drain current i d,pulse *1 30 a gate - source voltage v gss 20 v avalanche energy, single pulse e as *2 10.6 mj avalanche current i as *2 -2.7 a power dissipation p d *3 2 w junction temperature t j 150 range of storage temperature t stg -55 to +150 www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 1/11 20150218 - rev.001 downloaded from: http:///
RF4E075AT datasheet ll thermal resistauce parameter symbol values unit min. typ. max. thermal resistance, junction - ambient r thja *3 - - 62.5 /w ll electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. drain - source breakdown voltage v (br)dss v gs = 0v, i d = -1ma -30 - - v breakdown voltage temperature coefficient v (br)dss i d = -1ma - -22 - mv/ t j referenced to 25 zero gate voltage drain current i dss v ds = -30v, v gs = 0v - - -1 a gate - source leakage current i gss v gs = 20v, v ds = 0v - - 100 na gate threshold voltage v gs(th) v ds = v gs , i d = -1ma -1.0 - -2.5 v gate threshold voltage temperature coefficient v gs(th) i d = -1ma - 2.9 - mv/ t j referenced to 25 static drain - source on - state resistance r ds(on) *4 v gs = -10v, i d = -7.5a - 16.7 21.7 m v gs = -4.5v, i d = -7.5a - 24.4 31.7 forward transfer admittance |y fs | *4 v ds = -5.0v, i d = -7.5a 6.5 - - s *1 pw Q 10s, duty cycle Q 1% *2 tr1: l ? 2mh, v dd = -15v, r g = 25, starting t ch = 25 fig.3-1,3-2 *3 mounted on 40mm40mm cu board *4 pulsed www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 2/11 20150218 - rev.001 downloaded from: http:///
RF4E075AT datasheet ll e lectrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. input capacitance c iss v gs = 0v - 1000 - pf output capacitance c oss v ds = -15v - 180 - reverse transfer capacitance c rss f = 1mhz - 140 - turn - on delay time t d(on) *4 v dd ? -15v,v gs = -10v - 10 - ns rise time t r *4 i d = -3.75a - 18 - turn - off delay time t d(off) *4 r l ? 4 - 60 - fall time t f *4 r g = 10 - 35 - ll gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. total gate charge q g *4 v dd ? -15v i d = -7.5a v gs = -10v - 22 - nc v gs = -4.5v - 11 - gate - source charge q gs *4 - 3.4 - gate - drain charge q gd *4 - 4.2 - ll body diode electrical characteristics (source-drain) (t a = 25c) parameter symbol conditions values unit min. typ. max. body diode continuous forward current i s t a = 25 - - -1.67 a body diode pulse current i sp *1 - - -30 a forward voltage v sd *4 v gs = 0v, i s = -1.67a - - -1.2 v www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 3/11 20150218 - rev.001 downloaded from: http:///
RF4E075AT datasheet ll e lectrical characteristic c r ves fig.1 power dissipation derating curve fig.2 maximum safe operating area fig.3 normalized transient thermal resistance vs. pulse width fig.4 single pulse maximum power dissipation www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 4/11 20150218 - rev.001 downloaded from: http:///
RF4E075AT datasheet ll e lectrical characteristic curves fig. 5 typical output characteristics(i) fig.6 typical ou tput characteristics(ii) fig.7 breakdown voltage vs. junction temperature www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 5/11 20150218 - rev.001 downloaded from: http:///
RF4E075AT datasheet ll e lectrical characteristic curves fig. 8 typical transfer characteristics fig.9 gate thresh old voltage vs. junction temperature fig.10 transconductance vs. drain current www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 6/11 20150218 - rev.001 downloaded from: http:///
RF4E075AT datasheet ll e lectrical characteristic curves fig. 11 d rain current derating curve fig.12 static drain - so urce on - state resistance vs. gate source voltage fig.13 static drain - source on - state resistance vs. junction temperature www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 7/11 20150218 - rev.001 downloaded from: http:///
RF4E075AT datasheet ll e lectrical characteristic curves fig. 1 4 static drain - source on - state resistance vs. drain current(i) fig.15 static drain - source on - state resistance vs. drain current(ii) fig.16 static drain - source on - state resistance vs. drain current(iii) www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 8/11 20150218 - rev.001 downloaded from: http:///
RF4E075AT datasheet ll e lectrical characteristic curves fig. 1 7 typical capacitance vs. drain - source voltage fig.18 switching characteristics fig.19 dynamic input characteristics fig.20 source c urrent vs. source drain voltage www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 9/11 20150218 - rev.001 downloaded from: http:///
RF4E075AT datasheet ll measurement circuits fig.1 -1 switching time measurement circuit fig.1-2 switch ing waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalan che waveform ll notice this product might cause chip aging and breakdown u nder the large electrified environment. please consider to design esd protection circuit. www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 10/11 20150218 - rev.001 downloaded from: http:///
RF4E075AT datasheet ll dimensions www.rohm.com ? 2015 rohm co., ltd. all rights reserved. 11/11 20150218 - rev.001 downloaded from: http:///
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